FET IV Characterization with SMUs

Field-effect transistor (FET) testing is a core application of source measure units (SMUs), requiring precise control of voltage and current across multiple device terminals. This video demonstrates how SMUs can be used to generate key IV characteristics by independently sweeping gate and drain voltages while simultaneously measuring current response.

Using a JFET as an example, the video walks through a dual-SMU setup that biases the gate and sweeps the drain-source voltage to generate a family of IV curves. The results are plotted in real time, showing key regions of device operation and closely matching datasheet performance. This highlights how coordinated sourcing and measurement enables fast, accurate characterization of multi-terminal devices.